Misra, of Basking Ridge, studies damage that occurs in nanometer-scale silicon, and silicon-germanium electronic devices. Damage occurs either when the devices are manufactured or in use. His goal is to understand how the damage occurs during semiconductor nano-device fabrication. By applying electrical pulses at very low temperatures, he can investigate the degradation in nano-devices.
In one study, Misra and his team incorporated deuterium ions, placing them inside the Metal Oxide Semiconductor transistor, where the semiconductor and the insulator meet. They found that the deuterium ions enhanced the reliability of the transistor – a finding that can lead to more reliable and durable electronics circuits.
In his lab, Misra manipulates the movement of the deuterium ions so they merge at the interface of the silicon and silicon dioxide; this combination eliminates the defects caused during the manufacture of the chips. His technique is applied during the formation of silicon nano-crystals.
Misra received a grant from the National Science Foundation to conduct an extensive study on his findings.
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